Method of making self-aligned device

Details Method of making self-aligned device Method of making self-aligned device

1979-06-28

1982-03-16

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

29579, 29591, 156657, 156662, 357 23, H01L 21306, H01L 21441

Patent

active

043193951

ABSTRACT:
A self-aligned MOS transistor having improved operating characteristics and higher packing density and a method for fabricating the device. Resistance of the gate electrode is reduced substantially by forming the electrode of a metal silicide. Resistance of the source and drain regions is likewise reduced substantially by forming a metal silicide in the doped junction region which allows those regions to be smaller and to require less area. The silicided source and drain regions are self-aligned with and closely spaced to the silicided gate electrode. This is provided by a process which utilizes and makes possible an undercut etching of a polycrystalline silicon gate electrode.

REFERENCES:
patent: 4033797 (1977-07-01), Dill et al.
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4182023 (1980-01-01), Cohen

Affiliated with

Also associated with

Rating

Method of making self-aligned device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making self-aligned device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making self-aligned device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1636430