Method of making Schottky diode with an improved voltage behavio

Details Method of making Schottky diode with an improved voltage behavio Method of making Schottky diode with an improved voltage behavio

1980-06-20

1982-01-12

Roy, Upendra

Metal treatment

Compositions

Heat treating

357 15, 357 91, 427 84, H01L 2948, H01L 2956, H01L 2990

Patent

active

043103626

ABSTRACT:
The voltage behaviour of a Schottky diode is improved by providing a Schottky diode of the type comprising an epitaxial layer locally covered with a metal layer and by depleting the space charge zone in the epitaxial layer at the periphery of the metal layer. This depletion is obtained by implanting ions counter balancing the initial doping of the epitaxial layer.

REFERENCES:
patent: 3541403 (1970-11-01), Lepselter et al.
patent: 4063964 (1977-12-01), Peressini et al.
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patent: 4096622 (1978-06-01), McIver
patent: 4110775 (1978-08-01), Festa
patent: 4149174 (1979-04-01), Shannon
patent: 4149905 (1979-04-01), Levinstein et al.
patent: 4202002 (1980-05-01), De La Moneda
Battista et al., IBM-TDB, 18 (1976) 3229.
Brack et al., IBM-TDB, 19 (1976) 2592.

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