Method of making schottky contacts on semiconductor surfaces

Details Method of making schottky contacts on semiconductor surfaces Method of making schottky contacts on semiconductor surfaces

1988-03-03

1989-08-22

Roy, Upendra

Fishing, trapping, and vermin destroying

357 91, 437175, H01L 21265

Patent

active

048596167

ABSTRACT:
In a Schottky contact on a semiconductor surface (3) comprising in the semiconductor edge region of the Schottky contact a doped guard ring (7) applied as self-aligning, and in which portions of the semiconductor edge region are shielded by at least one layer including a method for the production of such a Schottky contact, an improvement of the electrical properties of the Schottky contact and an improvement of the yield in the production of the Schottky contact is achieved by using the principles of the invention. Furthermore, high-temperature treatment of the Schottky contact is also made possible. At least one layer, shielding portions of the semiconductor edge region, is applied as a self-aligning protective layer (5; 21, 22; 32; 33, 34) for the guard ring (7).

REFERENCES:
patent: 4119446 (1978-10-01), Mastrioanni
patent: 4441931 (1984-04-01), Levin
patent: 4481041 (1984-11-01), Muller
patent: 4638551 (1987-01-01), Einthoven
Battista et al., IBM-TDB, 18 (1976) 3229.

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