Method of making Schottky barrier diode by ion implantation and

Details Method of making Schottky barrier diode by ion implantation and Method of making Schottky barrier diode by ion implantation and

1979-12-21

1981-04-07

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 15, 357 91, H01L 2990, B01J 700, B01J 1700

Patent

active

042604311

ABSTRACT:
A Schottky barrier diode is formed in a low impurity concentration N-type substrate by ion implanting N-type impurities to form a deep region having increased impurity surface concentration of at least 10.sup.16 carriers per cubic centimeters, forming P-type guard ring in the deep N-type region and forming an N.sup.+ contact region in the deep N-type region. NPN transistors can be fabricated in the original low impurity substrate or in an ion implanted substrate region having a lower breakdown voltage. Schottky clamped NPN transistors formed in the low impurity substrate include ion implanted regions interior to a base ring and extending down into a buried N.sup.+ collector region as does an ion implanted surface collector contact region having an N.sup.+ contact area.

REFERENCES:
patent: 3846192 (1975-11-01), Murrmann
patent: 3865649 (1975-02-01), Beasom
patent: 4035907 (1977-07-01), Allen et al.
patent: 4045248 (1977-08-01), Shannon et al.
patent: 4089020 (1978-05-01), Ikeda et al.
patent: 4096622 (1978-06-01), MacIver
patent: 4099260 (1978-07-01), Lynes et al.
patent: 4107719 (1978-08-01), Graul et al.
patent: 4149174 (1979-04-01), Shannon
Berger et al., IBM.-Tech. Discl. Bull. 14 (1971) 302.
Calhoun et al., IBM-Tech. Discl. Bull. 18 (1975) 1847.
Knepper, R. W., IBM-Tech. Discl. Bull. 17 (1974) 1609.

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