Method of making sagfets on buffer layers

Details Method of making sagfets on buffer layers Method of making sagfets on buffer layers

1990-01-31

1990-08-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG160, 148DIG72, 437128, 437133, H01L 2136

Patent

active

049487523

ABSTRACT:
A composite buffer layer is formed with a layer of GaAs on a semi-insulating GaAs substrate. Next a short period superlattice is formed followed by another GaAs layer, whereon is formed a first AlGaAs layer having a first mole fraction of Al and a second AlGaAs layer having a second mole fraction of Al higher than the first mole fraction. As intrinsic GaAs channel layer is formed on the second AlGaAs layer.

REFERENCES:
patent: 4378259 (1983-03-01), Hasegawa
patent: 4598164 (1986-07-01), Tiedje
patent: 4695857 (1987-09-01), Baba
patent: 4769341 (1988-09-01), Luryi
patent: 4885260 (1989-12-01), Ban

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