Fishing – trapping – and vermin destroying
Patent
1993-06-30
1995-05-16
Fourson, George
Fishing, trapping, and vermin destroying
437 52, 437 89, 437918, 437 60, 437200, H01L 2128
Patent
active
054160340
ABSTRACT:
A method for fabricating a high impedance load device in an integrated circuit. An opening in an insulating layer is formed to expose a first region below the insulating layer. A region of a refractory metal silicide is formed in the opening. Then, the integrated circuit is annealed until a layer of epitaxial silicon from the refractory metal silicide is deposited on the region, wherein the layer of epitaxial silicon separates the first region from the refractory metal silicide.
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IEEE Transactions on Electron Devices, vol. ED-30, No. 2, Feb. 1983 Masamichi Mori "Resistance Increase in Small-Area Si-Doped Al-n-Si Contacts" pp. 81-86.
Applied Physics Letters, vol. 31 No. 2, Jul. 1977, G. Majni et al. "Large-Area Uniform Growth of <100> S1 through Al Film By Solid Epitzxy" pp. 125-126.
Oppolzer et al., "Journal of Vacuum Science & Technology B", Oct.-Dec. 1984 vol. 2, pp. 630-635.
Fourson George
Hill Kenneth C.
Jorgenson Lisa K.
Robinson Richard K.
SGS-Thomson Microelectronics Inc.
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