Etching a substrate: processes – Forming or treating an article whose final configuration has...
Patent
1997-12-18
2000-07-11
Sergent, Rabon
Etching a substrate: processes
Forming or treating an article whose final configuration has...
7351401, 7351436, 216 2, 216 41, 216 63, 216 65, 216 66, 216 67, 216 94, 437225, B44C 122, C25F 302, C25F 312, G01P 1502
Patent
active
060867744
ABSTRACT:
A method of making released structures by using at least two directional etching steps. Cantilevers, bridges and many other structures can be made with the present invention. In a preferred embodiment, two directional etching steps are performed at opposing angles nonnormal to the substrate surface such that the substrate is undercut and a structure is released. Alternatively, more than two directional etching steps may be performed at various angles. For example, the substrate may be rotated continuously during the directional etching process. A cantilever formed by the method of the present invention necessarily has a substantially triangular cross section. Directional etching processes that can be used include focused ion beam etching and ECR plasma etching. Some directional etching processes may require the use of a patterned etch resist layer. Other etching processes such as focused ion beam etching may use scanning techniques to select which regions are etched. A backside etch can be performed to remove remaining substrate material under the released micromachined structure. The method is particularly well suited for making released cantilevers.
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Ho Francis
Yamamoto Yoshihisa
Japan Science and Technology Corporation
Sergent Rabon
The Board of Trustees of the Stanford Leland Junior University
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