Method of making quantum box semiconductor device

Details Method of making quantum box semiconductor device Method of making quantum box semiconductor device

1996-12-03

1998-10-06

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438504, 438962, H01L 2120

Patent

active

058175385

ABSTRACT:
A semiconductor device having: an underlie having a semiconductor surface capable of growing thereon single crystal; and a first semiconductor layer, the first semiconductor layer including: a first region of group III-V compound semiconductor epitaxially grown on generally the whole area of the semiconductor surface; and second regions of group III-V compound semiconductor disposed and scattered in the first region, the second region having a different composition ratio of constituent elements from the first region, wherein lattice constants of the first and second regions in no strain state differ from a lattice constant of the semiconductor surface, and a difference between the lattice constant of the second region in no strain state and the lattice constant of the semiconductor surface is greater than a difference between the lattice constant of the first region in no strain state and the lattice constant of the semiconductor surface. A semiconductor device having a quantum box structure is provided capable of being manufactured by relatively simple processes.

REFERENCES:
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4748132 (1988-05-01), Fukuzawa et al.
patent: 4883769 (1989-11-01), Au Coin et al.
patent: 5158907 (1992-10-01), Fitzgerald, Jr.
patent: 5187715 (1993-02-01), Weisbuch et al.
patent: 5189679 (1993-02-01), Derry et al.
patent: 5258326 (1993-11-01), Morishima et al.
patent: 5281543 (1994-01-01), Fukuzawa et al.
patent: 5293050 (1994-03-01), Chapple-Sokol et al.
patent: 5313484 (1994-05-01), Arimoto
patent: 5371379 (1994-12-01), Narusawa
patent: 5614435 (1997-03-01), Petroff et al.

Affiliated with

Also associated with

Rating

Method of making quantum box semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making quantum box semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making quantum box semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-76466