Method of making precision doped polysilicon vertical ballast re

Details Method of making precision doped polysilicon vertical ballast re Method of making precision doped polysilicon vertical ballast re

1980-08-25

1983-10-25

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 59, 357 91, H01L 21263, H01L 2126, H01L 700

Patent

active

044117086

ABSTRACT:
The structure and associated fabrication processes disclosed provide a resistive element directly over a specific semiconductor region. Use of such a structure in a high current device ballasts emitter fingers to improve the maximum current flow of the device. The resistor element includes polysilicon which has conductivity affecting impurities in it with concentration less than 10.sup.20 atom/cm.sup.3, and typically 10.sup.17 to 10.sup.19 atom/cm.sup.3, to create a resistivity of generally 0.05 to 5 ohm-cm.
Such a resistive element may be formed by plural implants into the polysilicon, with subsequent annealing; by smoothly varying, typically between 10 keV and 300 keV, the implant energy during implanting; by implanting an appropriate impurity into doped polysilicon to adjust the effective impurity concentration; or by backdiffusing an impurity from a heavily doped region into the overlaying polysilicon.

REFERENCES:
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patent: 4125426 (1978-11-01), Inayoshi et al.
patent: 4161740 (1979-07-01), Frey
patent: 4188707 (1980-02-01), Asano et al.
patent: 4234357 (1980-11-01), Scheppele
patent: 4266236 (1981-05-01), Ueda
patent: 4313255 (1982-02-01), Shinozaki et al.
Sakurai et al., Jap. Jour. Appl. Phys. 19 (1980) Supplement 19-1, p. 181.
Lee, C. H. IBM-TDB, 22, (1980) 4881-4882.
Barson, F. IBM-TDB, 22 (1980) 4052-4053.

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