Method of making post-metal programmable MOS read only memory

Details Method of making post-metal programmable MOS read only memory Method of making post-metal programmable MOS read only memory

1978-03-20

1981-09-22

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29584, 148 15, 357 45, 357 91, G11C 1140, H01L 744, H01L 2710, B01J 1700

Patent

active

042901847

ABSTRACT:
An MOS read only memory or ROM is formed by a process compatible with standard N-channel silicon gate manufacturing methods. The ROM is programmed after the top level of contacts and interconnections, usually metal, has been deposited and patterned. Address lines and gates are polysilicon, and output and ground lines are defined by elongated N+ regions. Each potential MOS transistor in the array is programmed to be a logic "1" or "0" by ion implanting through the polysilicon gates and thin gate oxide, using patterned protective oxide as a mask, or using photoresist as a mask prior to application of protective oxide.

REFERENCES:
patent: 3377513 (1968-04-01), Ashby
patent: 3384879 (1968-05-01), Stahl
patent: 3747203 (1973-07-01), Shannon
patent: 3865651 (1975-02-01), Arita
patent: 3887994 (1975-06-01), Ku
patent: 3914855 (1975-10-01), Cheney
patent: 4059826 (1977-11-01), Rogers
patent: 4129936 (1978-12-01), Takei

Affiliated with

Also associated with

Rating

Method of making post-metal programmable MOS read only memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making post-metal programmable MOS read only memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making post-metal programmable MOS read only memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-328926