Method of making polysilicon Schottky clamped transistor and ver

Details Method of making polysilicon Schottky clamped transistor and ver Method of making polysilicon Schottky clamped transistor and ver

1992-06-05

1993-05-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

257528, H01L 21265

Patent

active

052121020

ABSTRACT:
An improved method for fabricating polysilicon Schottky clamped transistors and vertical fuse devices in the same semiconductor structure is disclosed. The resulting structure yields an improved Schottky clamped transistor and vertical fuse device. The improved Schottky transistor has a silicide rectifying contact between the base and collector of the transistor, the vertical fuse is provided with a direct contact between an aluminum contact metal and a polysilicon emitter contact.

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