Method of making polysilicon resistors with a low thermal activa

Details Method of making polysilicon resistors with a low thermal activa Method of making polysilicon resistors with a low thermal activa

1984-05-30

1985-12-24

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 357 59, 357 91, 427 531, H01L 21263, H01L 2126, H01L 21425

Patent

active

045604193

ABSTRACT:
An improved process in making a polysilicon resistor suitable for use as a load resistor in a static memory wherein after the doping of the polysilicon, the device is annealed by exposing it to a rapid increase of ambient temperature (up to between 900.degree. and 1200.degree. C.), maintaining the high ambient temperature for a controlled time (about 5 seconds) and then lowering the ambient temperature at a rapid rate. This decreases resistance by one order of magnitude and significantly decreases the temperature activation energy of the resistor. This permits static memory cells to retain data even though the cell has high leakage currents, thereby improving final test yields.

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