Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1991-10-31
1993-06-29
Chaudhuri, Olik
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
361523, 29 2542, H04R 1700, H01G 700, H01G 900
Patent
active
052230023
ABSTRACT:
Highly conducting polyaniline is produced in situ in a tantalum capacitor by subjecting an excess of monomeric aniline to a solution having a low concentration of ammonium persulfate reagent. The monomer is oxidized by the reagent in preference to the polymer, so that the presence of excess monomer protects the polymer as it is produced against further oxidation to a less conductive species.
REFERENCES:
patent: 4780796 (1988-10-01), Fukuda et al.
patent: 4803596 (1989-02-01), Helwig et al.
MacDiarmid, Alan G.; Epstein, Arthur J., Faraday Discussions of the Chemical Society, 1989, 88, 317-332.
Chaudhuri Olik
Paladugu Ramamohan R.
Sprague Electric Company
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