Method of making plurality of bipolar transistors

Details Method of making plurality of bipolar transistors Method of making plurality of bipolar transistors

1996-12-10

1999-11-02

Arroyo, Teresa M.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Making plural bipolar transistors of differing electrical...

438309, 438322, 438323, 438357, 438358, 438419, 438416, 438554, 257553, 257555, H01L 218222

Patent

active

059769408

ABSTRACT:
In a semiconductor device comprising a first bipolar transistor and a second bipolar transistor having different voltages formed on a semiconductor substrate made by forming an epitaxial layer on a silicon substrate, in an upper part of the silicon substrate the first bipolar transistor has an N.sup.+ -type first embedded diffusion layer having an impurity concentration higher than that of the epitaxial layer and the second bipolar transistor has an N-type second embedded diffusion layer having a lower impurity concentration and a deeper diffusion layer depth than the first embedded diffusion layer, whereby a high speed bipolar transistor and a high voltage bipolar transistor are formed on the same substrate.

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