Method of making planarized, self-aligned bipolar integrated cir

Details Method of making planarized, self-aligned bipolar integrated cir Method of making planarized, self-aligned bipolar integrated cir

1988-12-07

1991-04-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 61, 437 67, 437 89, 437 99, 437162, 437191, 437228, 437233, 437235, 357 59, H01L 2170

Patent

active

050082086

ABSTRACT:
A method for making a bipolar integrated circuit structure in a semiconductor substrate. A layer of insulating material having an implantation opening is formed on the upper surface of the semiconductor substrate. A polysilicon layer is formed in the implantation opening. A doping material is implanted into the polysilicon-filled opening. The doping material is diffused into the substrate material from the polysilicon-filled opening.

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