Method of making planar-type bottom electrode for...

Details Method of making planar-type bottom electrode for... Method of making planar-type bottom electrode for...

2011-04-05

2011-04-05

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S243000, C257S301000, C257SE27048, C257SE27092

Reexamination Certificate

active

07919384

ABSTRACT:
A method of making planar-type bottom electrode for semiconductor device is disclosed. A sacrificial layer structure is formed on a substrate. Multiple first trenches are defined in the sacrificial layer structure, wherein those first trenches are arranged in a first direction. The first trenches are filled with insulating material to form an insulating layer in each first trench. Multiple second trenches are defined in the sacrificial layer structure between the insulating layers, and are arranged in a second direction such that the second trenches intersect the first trenches. The second trenches are filled with bottom electrode material to form a bottom electrode layer in each second trench. The insulating layers separate respectively the bottom electrode layers apart from each other. Lastly, removing the sacrificial layer structure defines a receiving space by two adjacent insulating layers and two adjacent bottom electrode layers.

REFERENCES:
patent: 6914286 (2005-07-01), Park

Affiliated with

Also associated with

Rating

Method of making planar-type bottom electrode for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making planar-type bottom electrode for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making planar-type bottom electrode for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2722063