Method of making planar heterobipolar transistor having trenched

Details Method of making planar heterobipolar transistor having trenched Method of making planar heterobipolar transistor having trenched

1992-10-13

1994-08-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 61, 437 31, 437 67, 148DIG72, 257197, 257517, H01L 21265, H01L 2970

Patent

active

053407555

ABSTRACT:
A planar heterobipolar transistor and its methods for manufacture provide that the transistor has the base-emitter region separated from the collector terminal by a collector parting trench and the parting trench structure may be used to separate the transistor from adjoining function components.

REFERENCES:
patent: 4318751 (1982-03-01), Horng
patent: 4751195 (1988-06-01), Kauri
patent: 4889831 (1989-12-01), Ishii et al.
patent: 4933732 (1990-06-01), Katoh et al.
patent: 4983532 (1991-01-01), Mitani et al.
patent: 5124270 (1992-06-01), Morizuka
patent: 5185214 (1993-02-01), Chang et al.

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