Method of making planar geometry Schottky diode using oblique ev

Details Method of making planar geometry Schottky diode using oblique ev Method of making planar geometry Schottky diode using oblique ev

1985-09-30

1987-02-03

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148175, 148187, 148DIG84, 148DIG140, 427 86, H01L 2956, H01L 21283

Patent

active

046400036

ABSTRACT:
A Schottky diode and method of making same in which a n+ doped layer, an n oped layer and an undoped layer of a semi-insulating material selected from the group consisting of gallium arsenide, aluminum gallium arsenide and indium phosphide is grown consecutively on a semi-insulating substrate made of the same material. A mesa with acute angled sides is etched on the undoped layer to such a depth that the n doped layer is exposed. A Schottky and ohmic contact are then deposited on opposite sides of the mesa. The exposed n layer is then bombarded with protons at normal incidence.

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patent: 4377899 (1983-03-01), Otani et al.
patent: 4532698 (1985-08-01), Fang et al.
patent: 4559238 (1985-12-01), Bujatti et al.

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