Method of making pin junction semiconductor device with RF depos

Details Method of making pin junction semiconductor device with RF depos Method of making pin junction semiconductor device with RF depos

1992-02-14

1993-10-26

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437101, 136258, 257458, 427 74, 427575, 427578, H01L 3118, H01L 31075

Patent

active

052565769

ABSTRACT:
A method for manufacturing thin film, photovoltaic devices of the type having an intrinsic semiconductor layer disposed between two oppositely charged doped, semiconductor layers. A buffer layer of intrinsic semiconductor material is RF deposited at the junction between a microwave deposited, base intrinsic layer and a layer of doped material. The cell produced by the method of the present invention has enhanced performance characteristics over cells having microwave deposited intrinsic layers with no barrier layers.

REFERENCES:
patent: 4517223 (1985-05-01), Ovskinsky et al.
patent: 4619729 (1986-10-01), Johncock et al.
patent: 5034333 (1991-07-01), Kim

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