Method of making photovoltaic device

Details Method of making photovoltaic device Method of making photovoltaic device

1983-03-18

1985-01-08

Hearn, Brian E.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 427 85, 427 86, 136258, C23C 1310, H01L 3118

Patent

active

044926057

ABSTRACT:
A method for making photovoltaic device comprising the steps of moving at least one substrate into a reaction chamber, causing a plasma reaction of raw material gases in said reaction chamber, thereby forming an amorphous silicon layer of a first conductivity type on said substrate, moving said at least one substrate into a next reaction chamber for a next plasma reaction, causing said next plasma reaction of next raw material gases in said reaction chamber, thereby forming a second amorphous silicon layer of a second conductivity type on said layer of the first conductivity type, the improvement being in after finishing said forming of said an amorphous silicon layer of a first conductivity type, changing the gas atmosphere of said reaction chamber into a different atmosphere which is substantially identical and of equal pressure to the next gas atmosphere of said next reaction chamber, and thereafter moving said substrate to said next reaction chamber.

REFERENCES:
patent: 4015558 (1977-04-01), Small et al.
patent: 4400409 (1983-08-01), Izu et al.
patent: 4417092 (1983-11-01), Moustakas et al.
G. F. Barber, IBM Technical Disclosure Bulletin, vol. 11, No. 7, Dec. 1968.
Kumano et al, "Photovoltaic Behavior of Amorphous Si:H and Si:F:H Solar Cells", Conf. Rec. 15th IEE Photovoltaic Specialists Conf., May 12-15, 1981, pub. Aug. 1981.

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