Method of making phase-shifting lithographic masks

Details Method of making phase-shifting lithographic masks Method of making phase-shifting lithographic masks

1990-12-05

1992-10-06

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430313, 430318, G03F 100, G03F 900

Patent

active

051530830

ABSTRACT:
Phase-shifting (two-optical-level) masks are manufactured by a self-aligned technique in which after first-level trenches in the mask have been formed, second-level trenches therein are formed by patterning an electron resist overlying the mask in such a manner that the edges of the patterned resist can be located anywhere within the first-level trenches, whereby the need for precise alignment of the resist patterning for the second-level trenches is avoided.

REFERENCES:
patent: 4906326 (1990-03-01), Amemiya
patent: 4985319 (1991-01-01), Watakabe
patent: 5045417 (1991-09-01), Okamoto
Nitayama, A. et al., "New Phase Shifting Mask with Self-Aligned Phase Shifters for a Quarter Micron Lithography", International Electron Device Meeting (IEDM) Technical Digest, pp. 57-60, (3.3.1-3.3.4) (Dec., 1989).

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