Method of making P-type hydrogenated amorphous silicon

Details Method of making P-type hydrogenated amorphous silicon Method of making P-type hydrogenated amorphous silicon

1985-01-17

1985-11-05

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 85, 427 95, 4273722, B05D 306

Patent

active

045513520

ABSTRACT:
A layer of P-type hydrogenated amorphous silicon having a wide band gap and relatively low conductivity is formed by subjecting a substance to a gaseous mixture of a silicon hydride and an acceptor material in a glow discharge while heating the substrate to a temperature of no greater than 120.degree. C. The deposited acceptor-doped hydrogenated amorphous silicon layer is then heated at a temperature of between 130.degree. C. and 300.degree. C. to increase the conductivity of the layer.

REFERENCES:
patent: 3258663 (1966-06-01), Weimer
patent: 4064521 (1979-12-01), Carlson
patent: 4229502 (1980-10-01), Wu et al.
patent: 4309224 (1982-01-01), Shibata
patent: 4379020 (1983-04-01), Glaeser et al.
patent: 4457949 (1984-07-01), Takasaki et al.
patent: 4496450 (1985-01-01), Hitotsuyanagi et al.

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