Method of making oxide passivated mesa epitaxial diodes with int

Details Method of making oxide passivated mesa epitaxial diodes with int Method of making oxide passivated mesa epitaxial diodes with int

1981-06-03

1983-02-15

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 29590, 156649, 156657, 357 56, H01L 2906, H01L 2990

Patent

active

043732550

ABSTRACT:
An oxide passivated mesa epitaxial diode with an integral heat sink, and a process by which it may be fabricated. The passivation layer of highly pure thermally grown SiO.sub.2 is formed over the mesa walls in the region of the pn junction without causing a reaction between the contact metals and their surroundings during the high temperature environment imposed during thermal growth. The heat sink is deposited after the SiO.sub.2 passivation has been grown, replacing a polycrystalline silicon layer beneath the mesa formation which was used as a temporary structural support. Dopant, to form the pn junction, is introduced into the silicon wafer after the formation of the passivation layer but before the heat sink is deposited.

REFERENCES:
patent: 3895429 (1975-07-01), Huang et al.
patent: 3903592 (1975-09-01), Heckl
patent: 4028140 (1977-06-01), Summers et al.
Wright, G. T., "Transistor Transit-Time Oscillator (Translator)", in Electronics Letters, vol. 12, No. 2, 1/22/1976, pp. 37-38.

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