Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor
Patent
1999-02-19
2000-11-21
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Forming schottky junction
Compound semiconductor
438602, 438572, 438580, H01L 2128, H01L 2144
Patent
active
061502464
ABSTRACT:
Metallic osmium on SiC (either .beta. or .alpha.) forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction having essentially unchanged operating characteristics to at least 1050.degree. C. and Schottky diodes that remain operable to 1175.degree. C. and a barrier height over 1.5 ev. On p-type SiC, Os forms an ohmic contact with specific contact resistance of <10.sup.-4 ohm-cm.sup.2. Ohmic and rectifying contacts to a TiC layer on a SiC substrate are formed by depositing a WC layer over the TiC layer, followed by a metallic W layer. Such contacts are stable to at least 1150.degree. C. Electrodes connect to the contacts either directly or via a protective bonding layer such as Pt or PtAu alloy.
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3C Semiconductor Corporation
Monin, Jr. Donald L.
Peralta Ginette
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