Method of making Os and W/WC/TiC ohmic and rectifying contacts o

Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438602, 438572, 438580, H01L 2128, H01L 2144

Patent

active

061502464

ABSTRACT:
Metallic osmium on SiC (either .beta. or .alpha.) forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction having essentially unchanged operating characteristics to at least 1050.degree. C. and Schottky diodes that remain operable to 1175.degree. C. and a barrier height over 1.5 ev. On p-type SiC, Os forms an ohmic contact with specific contact resistance of <10.sup.-4 ohm-cm.sup.2. Ohmic and rectifying contacts to a TiC layer on a SiC substrate are formed by depositing a WC layer over the TiC layer, followed by a metallic W layer. Such contacts are stable to at least 1150.degree. C. Electrodes connect to the contacts either directly or via a protective bonding layer such as Pt or PtAu alloy.

REFERENCES:
patent: 2918396 (1959-12-01), Hall
patent: 3308356 (1967-03-01), Rutz
patent: 3510733 (1970-05-01), Addamiano et al.
patent: 3831187 (1974-08-01), Neilson
patent: 4199774 (1980-04-01), Plummer
patent: 4364073 (1982-12-01), Becke
patent: 4738937 (1988-04-01), Parsons
patent: 4764435 (1988-08-01), Hosizaki et al.
patent: 4782377 (1988-11-01), Mahan
patent: 4914042 (1990-04-01), Mahan
patent: 4940898 (1990-07-01), Mahan
patent: 5124779 (1992-06-01), Furukawa et al.
patent: 5165283 (1992-11-01), Kurtz et al.
patent: 5384470 (1995-01-01), Tachibana et al.
patent: 5403772 (1995-04-01), Zhang
patent: 5407855 (1995-04-01), Maniar et al.
patent: 5436505 (1995-07-01), Hayashi et al.
patent: 5442200 (1995-08-01), Tischler
patent: 5445711 (1995-08-01), Tanski et al.
patent: 5448081 (1995-09-01), Malhi
patent: 5471072 (1995-11-01), Papanicolaou
patent: 5492752 (1996-02-01), Parsons et al.
Wolf, S., Silicon Processing for the VLSI Era, vol. 1: Process Technology. Lattice Press, pp. 102-103, 1990.
Chen, J.C.: Kolawa, E,; Nicolet, M.A., Baud, L.; Jaussaud, C.; Madar, R,; Bernard, C., "Stability of rhenium thin films with single crystal (001).beta.--SiC,"J. Applied Physics (2), Jan. 15, 1994.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making Os and W/WC/TiC ohmic and rectifying contacts o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making Os and W/WC/TiC ohmic and rectifying contacts o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making Os and W/WC/TiC ohmic and rectifying contacts o will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1256479

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.