Method of making ohmic electrical contact to a matrix of semicon

Details Method of making ohmic electrical contact to a matrix of semicon Method of making ohmic electrical contact to a matrix of semicon

1990-11-07

1992-03-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 67, 437195, 437200, 437228, 437 48, H01L 21283, H01L 2131

Patent

active

050988620

ABSTRACT:
Electrical ohmic contacts are made to a matrix of silicon having conductive rods embedded therein without making contact to any of the rods. Those rods which extend to the surface in the selected area of the matrix to be contacted are etched to form holes. The holes are filled with insulating polycrystalline silicon. The region of the selected area is heavily doped, and an ohmic contact member is made thereto. The underlying rods are spaced from the ohmic contact member and the heavily-doped region by intervening polycrystalline silicon.

REFERENCES:
patent: 4482907 (1984-11-01), Jay
patent: 4660063 (1987-04-01), Anthony
patent: 4724223 (1988-02-01), Ditchek
patent: 4800417 (1989-01-01), Kato
patent: 4829173 (1989-05-01), Ditchek et al.
patent: 4845051 (1989-07-01), Cogan et al.
patent: 4977436 (1990-12-01), Tsuchiya et al.

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