Method of making NOR-type ROM with LDD cells

Details Method of making NOR-type ROM with LDD cells Method of making NOR-type ROM with LDD cells

1993-06-28

1995-04-18

Thomas, Tom

Fishing, trapping, and vermin destroying

437 44, 437 52, H01L 2170

Patent

active

054078520

ABSTRACT:
ROM memories made in MOS or CMOS technology with LDD cells may be programmed advantageously in a relatively advanced stage of fabrication by decoupling an already formed drain region from the channel region of cells to be permanently made nonconductive (programmed) by implanting a dopant in an amount sufficient to invert the type of conductivity in a portion of the drain region adjacent to the channel region. In CMOS processes, the programming mask may be a purposely modified mask commonly used for implanting source/drain regions of transistors of a certain type of conductivity. By using high-energy implantation and a dedicated mask, the programming may be effected at even later stages of the fabrication process.

REFERENCES:
patent: 4208780 (1980-07-01), Richman
patent: 4599118 (1986-07-01), Ham et al.
patent: 4649629 (1987-03-01), Miller et al.
patent: 5091329 (1992-02-01), Bekkering et al.
Patent Abstracts of Japan, vol. 012, No. 287 (E-643) 5 Aug. 1988 & JP-A-63 064 361 (Sharp Corp) 22 Mar. 1988.
Patent Abstracts of Japan, vol. 9, No. 110 (E-314(1833) 15 May 1985 & JP-A-60 000 769 (Hitachi Seisakusho K. K.) 5 Jan. 1985.

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