Method of making non-volatile semiconductor memory elements

Details Method of making non-volatile semiconductor memory elements Method of making non-volatile semiconductor memory elements

1978-12-11

1981-02-10

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

148 15, 148 63, 427 93, 427 94, 4271263, 357 54, H01L 21316, H01L 21318

Patent

active

042502063

ABSTRACT:
Non-volatile metal-insulator-semiconductor memory elements are fabricated using a novel sequence of steps for forming multiple dielectric layers including particularly a layer of titanium dioxide covering a layer of silicon dioxide covering a layer of silicon nitride. The titanium dioxide of a type known as rutile is formed by evaporation of titanium upon the silicon dioxide and oxidization of the titanium in an oxygen ambient at high temperatures.

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Agusta et al., "Metal-Insulator-Trap-Oxide-Semiconductor Memory Cell," IBM TDB, vol. 13, No. 12, May 1971.

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