Method of making negative electron affinity photocathode

Details Method of making negative electron affinity photocathode Method of making negative electron affinity photocathode

1980-01-08

1981-09-01

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

313 94, 313346R, 148171, 148175, 156655, 156662, H01L 3118

Patent

active

042863732

ABSTRACT:
A method of making transmission mode glass-sealed negative electron affinity (NEA) gallium arsenide (GaAs) photocathodes, utilizing germanium (Ge) as the seed crystal and multilayers of GaAs and gallium aluminum arsenide (GaAlAs) grown by metal alkyl-hydride vapor-phase epitaxy. The GaAs serves as the photoemitting layer and the GaAlAs serves as the passivating layer. The Ge, GaAs,GaAlAs combination is sealed to a glass support substrate which serves as the input window for the device. Finally, the Ge is removed and the GaAs is activated.

REFERENCES:
patent: 3673011 (1972-06-01), Strull
patent: 3951698 (1976-04-01), Wilson et al.
patent: 3959045 (1976-05-01), Antypas
patent: 4128733 (1978-12-01), Fraas et al.
G. A. Antypas et al. "Glass-Sealed GaAs-AlGaAs Transmission Photo-Cathode Appl. Phys. Lett., vol. 26, pp. 371-372 (1975).

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