Method of making n-channel and p-channel junction field-effect t

Details Method of making n-channel and p-channel junction field-effect t Method of making n-channel and p-channel junction field-effect t

1992-05-08

1994-03-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 56, 437 59, H01L 21265

Patent

active

052964094

ABSTRACT:
A method of making N-channel and P-channel junction field-effect transistors using a modified CMOS process that simultaneously makes complementary metal-oxide-semiconductor transistors, or a modified BiCMOS process that simultaneously makes bipolar transistors and complementary metal-oxide-semiconductor transistors. Making junction field effect transistors using the basic CMOS process requires mask changes and an additional mask, etch, and implant step. Making junction field effect transistors using the BiCMOS process only requires mask changes.

REFERENCES:
patent: 4325180 (1982-04-01), Curran
patent: 4373253 (1983-02-01), Khadder et al.
patent: 4403395 (1983-09-01), Curran

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