Method of making multiple wavelength p-n junction semiconductor

Details Method of making multiple wavelength p-n junction semiconductor Method of making multiple wavelength p-n junction semiconductor

1990-10-20

1991-12-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437987, H01L 2120

Patent

active

050717863

ABSTRACT:
A multiple wavelength semiconductor laser with two active layers separated by either a p-cladding layer of a p-n junction cladding layers. A p-disordered region and a n-disordered region extend through one of the active layers and into the intermediate cladding layer. A lateral waveguide is formed between the disordered regions in the active layer and a deep waveguide is formed beneath the p-disordered region in the other active layer. Since both active layers generate lightwaves at different wavelengths, forward-biasing the p-disordered region can cause either or both waveguides to emit radiation but at different wavelengths. The deep waveguide can also be a buried heterostructure laser.

REFERENCES:
patent: 4476563 (1984-10-01), Van Ruyven
patent: 4720468 (1988-01-01), Manigaux et al.
patent: 4747110 (1988-05-01), Takahashi et al.
patent: 4831629 (1989-05-01), Paoli et al.
patent: 4925811 (1990-05-01), Menigaux et al.
patent: 4947401 (1990-08-01), Hinata et al.
patent: 4980893 (1990-12-01), Thornton et al.

Affiliated with

Also associated with

Rating

Method of making multiple wavelength p-n junction semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making multiple wavelength p-n junction semiconductor , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making multiple wavelength p-n junction semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1040276