Method of making multilayered Al-alloy structure for metal condu

Details Method of making multilayered Al-alloy structure for metal condu Method of making multilayered Al-alloy structure for metal condu

1994-12-29

1996-10-01

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437194, 437199, 437957, H01L 21283

Patent

active

055610838

ABSTRACT:
A Si IC includes an Al-based layer which is deposited as a composite of sublayers of different composition Al-based materials. In one embodiment a first sublayer comprises an Al-Si-based alloy disposed so as to prevent substantial Si migration into the first sublayer, and a second sublayer, above the first, comprises an Al-based alloy with substantially no Si to alleviate precipitation-induced problems. The selection of the thickness of the second sublayer to be a major portion and the inclusion of barrier layers are also described.

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Ben-Tzur et al., "Modifications in the Interfacial . . . ", J. Vac. Sci. Technol. A8(6), Nov./Dec. 1990, pp. 4069-4071.

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