Method of making multilayer ohmic contact to thin film p-type II

Chemistry: electrical and wave energy – Processes and products

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29572, 29589, 29590, 204 371, 204 40, 427 88, 427 89, 427 91, 136256, 136260, 136264, C25D 712, C25D 550, C23C 1424, H01L 21443

Patent

active

046665692

ABSTRACT:
A method of making an ohmic content to a thin film of a II-VI compound semiconductor. The contact is made by etching the film with an acidic solution and thereafter treating the etched surface with an alkaline solution. A layer of copper 5 to 50 angstroms thick is deposited on the etched and treated surface and covered by a different metal. The contact may be heat treated to improve its performance.

REFERENCES:
patent: 3268309 (1966-08-01), Frank et al.
patent: 3370207 (1968-02-01), Fabel et al.
patent: 3465428 (1969-09-01), Spriggs et al.
patent: 4000508 (1976-12-01), Hager et al.
patent: 4065781 (1977-12-01), Gutknecht
patent: 4085500 (1978-04-01), Hager et al.
patent: 4388483 (1983-06-01), Basol et al.
patent: 4456630 (1984-06-01), Basol
patent: 4463215 (1984-07-01), Bassett et al.
H. Jaeger et al, J. Electronic Mat'ls, vol. 10, No. 3, May 1981, pp. 605-618.
NASA Tech. Briefs, Winter 1977, p. 433.
Boer et al., "P-Type Photoelectric Behavior in CdS Dominated by a High Resistivity Region Near the Anode" Phys. Rev., vol. 154, pp. 757-762 (1967).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making multilayer ohmic contact to thin film p-type II does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making multilayer ohmic contact to thin film p-type II, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making multilayer ohmic contact to thin film p-type II will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1562674

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.