Method of making multilayer distorted-lattice copper-oxide perov

Details Method of making multilayer distorted-lattice copper-oxide perov Method of making multilayer distorted-lattice copper-oxide perov

1995-06-07

1997-03-18

King, Roy V.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Coating

505474, 505234, 505701, 427 62, 4274193, B05D 512

Patent

active

056122926

ABSTRACT:
A multilayered structure comprising copper oxide perovskite material having altered superconductive properties is provided by epitaxially depositing on a substrate a layer of a first copper oxide material and then epitaxially depositing on the first layer a layer of a second, different copper oxide perovskite material. Further alternate epitaxially layers of the two copper oxide perovskite materials are then deposited one on the other. The first and second copper oxide perovskite materials in unstressed bulk states have nondistorted crystallographic lattice structures with unit cell dimensions that differ in at least one dimension. In the epitaxial layers, the crystallographic lattice structures of the two copper oxide materials are distorted relative to their nondistorted crystallographic lattice structures. At least one of the normal/superconducting transition parameters differs from a corresponding comparison normal/superconducting transition parameter for the copper oxide perovskite materials in the unstressed bulk state.

REFERENCES:
patent: 5358927 (1994-10-01), Inam et al.
Tokura et al, Nature 337 (1989) p. 345.

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