Method of making multilayer capacitor memory device

Details Method of making multilayer capacitor memory device Method of making multilayer capacitor memory device

1986-01-27

1987-10-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG14, 156634, 437 60, 437245, H01L 2172

Patent

active

047004576

ABSTRACT:
A semiconductor device comprising a capacitor of a laminated structure and a method of manufacturing thereof, in which first conductive layer and second conductive layer of different materials or different compositions are stacked alternately with dielectric films interposed therebetween and the first conductive layers and the second conductive layers are interconnected respectively at a time by suitably combining a selective etching method and an anisotropic etching method.

REFERENCES:
patent: 4156249 (1979-05-01), Koo
patent: 4441249 (1984-04-01), Alspector et al.
patent: 4451841 (1984-05-01), Hori et al.
patent: 4455568 (1984-06-01), Shiota
patent: 4460911 (1984-07-01), Salters
patent: 4507171 (1985-03-01), Bhatia et al.
Bailey, "Thin-Film Multilayer Capacitors Using Pyrolytically Deposited Silicon Dioxide", IEEE Trns. on Parts, Hybrids, Packaging, vol. PHP-1, No. 4, pp. 361-364, DCC. 76.
"Novel High Density, Stacked Capacitor MOS RAM", M. Koyanagi et al., Jap. J. Appl. Phys., vol. 18, Supplement 18-1, pp. 35 to 42, 1979.
"A 64 kbit MOS Dynamic RAM with Novel Memory Capacitor", F. Smith et al., IEEE Trans. Solid-State Circuits, vol. SC-15, No. 2, Apr. 1980, pp. 184-189.
"Quadruply Self-Aligned Stacked High-Capacitance RAM Using Ta.sub.2 O.sub.5 High-Density VLSI Dynamic Memory", K. Ohta, et al., IEEE Trans. Electron Devices, vol. ED-29, No. 3, Mar. 1982, pp. 368-376.

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