Method of making multi-terminal resonant tunneling transistor

Details Method of making multi-terminal resonant tunneling transistor Method of making multi-terminal resonant tunneling transistor

1995-11-02

1998-01-20

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437110, 437133, H01L 21203

Patent

active

057100586

ABSTRACT:
A transistor according to the invention for simultaneously providing at least two current-voltage characteristics includes a base, a collector, and an emitter. At least one of the base, collector, and emitter includes a first layer grown using molecular beam epitaxy (MBE). The first layer includes a first strip having a first doping characteristic created using focused ion beam processing. A second strip has a second doping characteristic created by focused ion beam processing. A middle section of undoped material is located between the first and second strips. A resonant tunneling junction is grown on the first layer using MBE and includes a plurality of layers.

REFERENCES:
patent: 4783427 (1988-11-01), Reed et al.
patent: 5415128 (1995-05-01), Kao et al.
patent: 5447873 (1995-09-01), Randall et al.

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