Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2011-03-29
2011-03-29
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S239000, C438S253000, C438S393000
Reexamination Certificate
active
07915135
ABSTRACT:
The present invention discloses a method of making a multi-layer structure for metal-insulator-metal capacitors, in which, a bottom electrode plate layer is formed on a substrate, wherein a Ti/TiN layer serving as a top anti-reflection coating (top ARC) of the bottom electrode plate layer including a titanium layer and a titanium nitride layer formed on the titanium layer is formed using a first and a second physical vapor deposition (PVD) processes at a temperature ranging from 25 to 400° C., and then a first capacitor dielectric layer, a middle electrode plate layer, a second capacitor dielectric layer, and a top electrode plate layer are formed on the bottom electrode plate layer in an order from bottom to top.
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patent: 2007/0105257 (2007-05-01), Park et al.
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Kay Wang, Clement Huang, Vincent Wu, Joel Huang, Kelvin Yang, K I Huang, TS Wu and KC Su“Double Metal-Insulator-Metal Capacitor Breakdown Voltage Improvement by Stacked Film & Process Optimization in High-Voltage Process” 2008 Proceedings Twenty Fifth International VLSI Multilevel Interconnection Conference (VMIC) (Oct. 28-30, 2008) VMIC Catalog No. 08 IMIC—800, pp. 255-259.
Huang Chun-Chih
Wang Chun-Kai
Wu Chun-Ming
Hsu Winston
Luu Chuong A.
Margo Scott
United Microelectronics Corp.
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