Method of making MOSFET depletion device

Details Method of making MOSFET depletion device Method of making MOSFET depletion device

1989-11-16

1991-06-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 46, 437 34, 437 40, H01L 21265

Patent

active

050213563

ABSTRACT:
A p-channel depletion device in a MOSFET is formed and preferably comprises a silicon substrate, an N-well region, P+ source and drain regions, and a polysilicon gate which has been appropriately doped to be of a P- conductivity type. The resulting structure performs analogously to a depletion device formed in accordance with conventional methods wherein a depletion mask and implant are utilized and are characterized by a threshold voltage of approximately +250 millivolts or greater.

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patent: 4845047 (1989-07-01), Holloway et al.
patent: 4866002 (1989-12-01), Shizukuishi et al.

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