Method of making MOS device using metal silicides or polysilicon

Details Method of making MOS device using metal silicides or polysilicon Method of making MOS device using metal silicides or polysilicon

1984-01-30

1985-03-19

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576B, 29578, 148 15, 148187, 357 91, H01L 2174, H01L 21265

Patent

active

045050279

ABSTRACT:
The invention relates to a method for producing MOS transistors with flat source/drain zones, short channel lengths, and a self aligned contacting plane comprised of a metal silicide. In this method, the source/drain zones in the semiconductor substrate are produced by out-diffusion of the contacting plane consisting of a doped metal silicide and deposited directly on the substrate. The method serves to produce NMOS, PMOS, and in particular CMOS circuits in VLSI technology and permits a very high packing density and an independent additional wiring plane of very low resistance.

REFERENCES:
patent: 4305200 (1981-12-01), Fu et al.
patent: 4319395 (1982-03-01), Lund et al.
patent: 4339869 (1982-07-01), Reihl et al.
patent: 4364166 (1982-12-01), Crowder et al.
patent: 4399605 (1983-08-01), Dash et al.
patent: 4411734 (1983-10-01), Maa
patent: 4434543 (1984-03-01), Schwabe et al.
patent: 4442591 (1984-04-01), Haken
patent: 4450620 (1984-05-01), Fuls et al.
Nagasawa et al., Jap. Jour, Appl. Phys. 22 (Jan. 1983) L-57-59.
De La Monada, IBM-TDB, 24 (1981) 3454.
Vossen, J. Vac. Sci. Technol. 19 (1981) 761.
Neppl et al., J. Electrochem. Soc. (May 1983) 1174.

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