Method of making metallization for semiconductor device

Details Method of making metallization for semiconductor device Method of making metallization for semiconductor device

1991-09-09

1994-03-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437979, H01L 2144

Patent

active

052984621

ABSTRACT:
In a semiconductor device including a semiconductor body, a continuous oxide layer, a continuous metallization layer, and a diffusion zone, the diffusion zone is located below a portion of the continuous oxide layer to reduce this portion in thickness, and the corresponding part of the metallization layer in the region of the oxide layer portion of reduced thickness forms an undulation which protects the metallization layer against thermal stresses.

REFERENCES:
patent: 3920484 (1975-11-01), Ogura et al.
patent: 4325180 (1982-04-01), Curran
patent: 4362574 (1982-12-01), Gevondyan
patent: 4377900 (1983-03-01), Nonaka et al.

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