Method of making metal oxide semiconductor structures using ion

Details Method of making metal oxide semiconductor structures using ion Method of making metal oxide semiconductor structures using ion

1975-05-23

1977-01-04

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 91, H01L 21265

Patent

active

040010481

ABSTRACT:
Method for forming metal oxide semiconductor structure with a precisely controlled channel formed by a combination of diffusion and implantation through a common mask.

REFERENCES:
patent: 3653978 (1972-04-01), Robinson et al.
patent: 3660735 (1972-05-01), McDougall
patent: 3865652 (1975-02-01), Agusta et al.
patent: 3873372 (1975-03-01), Johnson

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