Method of making metal oxide semiconductor field effect transist

Details Method of making metal oxide semiconductor field effect transist Method of making metal oxide semiconductor field effect transist

1992-05-15

1993-12-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 29, 437 41, 437 44, 437154, 257244, H01L 2144, H01L 2148

Patent

active

052702570

ABSTRACT:
A method of making a metal oxide semiconductor field effect transistor. An oxide layer is grown on the overall exposed surface of a substrate, which then has a trench formed by an etching process. A polysilicon layer is deposited on the trenched substrate, by using a nitride layer formed on the substrate as a mask, to form a gate region of a predetermined thickness. Then, the nitride layer is removed. The exposed portion of the polysilicon gate layer is then oxidized. Then, the exposed portion of the silicon substrate, disposed at opposite sides of the gate electrode, is subjected to a low concentration n-type ion injection, to form low concentration drain and source regions. Then, an oxide side wall is formed to surround the gate electrode. The exposed surface of the silicon substrate, disposed at opposite sides of the gate electrode, is subjected to a high concentration n-type ion injection. Then, an epitaxial layer is grown using the high concentration n-type ions as seeds, to form high concentration drain and source regions. In accordance with the method, it is possible to reduce the capacitance at junctions between gate and drain regions and between drain and source regions and the overall size of the produced semiconductor chip.

REFERENCES:
patent: 4939100 (1990-07-01), Jeuch et al.
patent: 5012306 (1991-04-01), Tasch, Jr. et al.

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