Method of making metal oxide semiconductor devices

Details Method of making metal oxide semiconductor devices Method of making metal oxide semiconductor devices

1974-09-12

1977-01-18

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 357 23, 357 55, B01J 1700

Patent

active

040031268

ABSTRACT:
A MOS transistor fabrication method using either three or four masking steps and wherein the channel between source and drain is defined by preferential etching of the semiconductor material resulting in a relatively deep V-shaped groove formed in the material between source and drain with the channel passing around this V-groove.

REFERENCES:
patent: 3503124 (1970-03-01), Wanlass
patent: 3574010 (1971-04-01), Brown
patent: 3775191 (1973-11-01), McQuhae
patent: 3806771 (1974-04-01), Petruzella
patent: 3878552 (1975-04-01), Rodgers
patent: 3930300 (1976-01-01), Nicolay

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