Method of making MES field effect transistor using III-V compoun

Details Method of making MES field effect transistor using III-V compoun Method of making MES field effect transistor using III-V compoun

1992-03-20

1993-04-20

Quach, T. N.

Fishing, trapping, and vermin destroying

437176, 437912, 437978, H01L 21338

Patent

active

052042782

ABSTRACT:
After a silicon nitride film is deposited on a compound semiconductor substrate, another insulating film such as a silicon dioxide film is provided thereon so as to define a channel region in the semiconductor substrate. Impurity ions such as Si ions are selectively implanted into the semiconductor substrate in the presence of the silicon nitride film and the insulating film, thereby providing source and drain regions and the channel region therein. The insulating film and the silicon nitride film located above the channel region are successively removed to provide a Schottky gate electrode thereon. The silicon nitride film is selectively removed from the substrate surface to provide source and drain electrodes on their regions. Accordingly, MESFETs can be produced without exposing the substrate surface during its manufacture.

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patent: 4863879 (1989-09-01), Kwok
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"A Single Step Selective Implantation Technology for Multiply Doped Layers Using Proximity Annealing", IEEE Electron Device Letters, vol. EDL-2, No. 12, Dec. 1981; Duncan et al., pp. 309-311.
Ghandhi, S. K., VLSI Fabrication Principles, John Wiley & Sons, 1983, pp. 419-429, 345-352.

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