Fishing – trapping – and vermin destroying
Patent
1995-08-30
1998-03-03
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437 48, 437984, H01L 218247
Patent
active
057233519
ABSTRACT:
The matrix of EPROM memory cells comprises on a semiconductor substrate lines of source and drain parallel and alternated one to another, floating gate areas interposed in a checkerboard pattern between said source and drain lines and control gate lines parallel to one another and perpendicular to said source and drain lines in a superimposed condition with intermediate dielectric and aligned with respect to said floating gate area. Field oxide areas are provided for, formed on the substrate between one and the other of said control gate lines and side fins of the floating gate areas and of the control gate lines superimposed over said field oxide areas.
REFERENCES:
patent: 4253106 (1981-02-01), Goldsmith et al.
patent: 4258466 (1981-03-01), Kuo et al.
patent: 4295265 (1981-10-01), Horiuchi et al.
patent: 4334347 (1982-06-01), Goldsmith et al.
patent: 4387447 (1983-06-01), Klass et al.
patent: 4405995 (1983-09-01), Shirai et al.
patent: 4422092 (1983-12-01), Guterman
patent: 4423491 (1983-12-01), Tickle
patent: 4437174 (1984-03-01), Masuoka
patent: 4490900 (1985-01-01), Chiu
patent: 4500899 (1985-02-01), Shirai et al.
patent: 4597060 (1986-06-01), Mitchell et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4734887 (1988-03-01), Sugatani
patent: 4749443 (1988-06-01), Mitchell et al.
patent: 4792925 (1988-12-01), Corda et al.
patent: 4829351 (1989-05-01), Engles et al.
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 4855800 (1989-08-01), Esquivel et al.
patent: 4897815 (1990-01-01), Tanaka et al.
patent: 4905062 (1990-02-01), Esquivel et al.
patent: 5023680 (1991-06-01), Gill et al.
patent: 5047362 (1991-09-01), Bergemont
patent: 5110753 (1992-05-01), Gill et al.
patent: 5120571 (1992-06-01), Gill et al.
patent: 5200350 (1993-04-01), Gill et al.
patent: 5296396 (1994-03-01), Bellezza
Chaudhari Chandra
Morris James H.
SGS--Thomson Microelectronics S.r.l.
LandOfFree
Method of making matrix of EPROM memory cell with a tablecloth s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making matrix of EPROM memory cell with a tablecloth s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making matrix of EPROM memory cell with a tablecloth s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2246901