Method of making low resistance contacts

Details Method of making low resistance contacts Method of making low resistance contacts

1986-01-16

1987-11-03

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

20419232, 204298, 427294, 427295, 118 501, B05D 306

Patent

active

047043016

ABSTRACT:
The invention relates to a method of making low resistance contacts between first and second metallization levels in integrated semiconductor circuits. In accordance with the invention, the semiconductor substrates to be cleaned are arranged on a substrate holder in a vacuum chamber. There, a gas plasma is generated by means of a getter electrode made of a material which has a high affinity for oxygen or oxygen containing compounds. This improves the vacuum by reducing the steam partial pressure. The actual cleaning of the exposed surfaces of the semiconductor substrate is effected subsequently by means of cathode sputtering through applying a radio frequency voltage to the substrate holder. By sputtering material from the surface of the getter electrode prior to cathode sputtering of the semiconductor substrate surface, the time for cleaning the semiconductor substrates can be considerably reduced so that it is also possible to clean substrates with masks of temperature-sensitive photoresists by means of cathode sputtering. The invention also comprises a device for carrying out said method.

REFERENCES:
patent: 3298863 (1967-01-01), McCusker
patent: 3691053 (1972-09-01), James et al.
Dushman, Scientific Foundations of Vacuum Technique, John Wiley & Sons, New York (1962), pp. 678-683.
"Forming Low Metal-To-Metal Contact Resistance in Multilevel Metallizaton on Integrated Circuit Semiconductor Devices" by W. K. Hildick, IBM-TDB, vol. 19, No. 1, Jun. 1976, p. 20.
"Obtaining an Oxide-Free Interface in Via Connections" by H. J. Bauer, IBM-TDB, vol. 20, No. 2, Jul. 1977, pp. 574-576.

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