Method of making light-receiving diode

Fishing – trapping – and vermin destroying

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437 20, 437134, 437143, 437152, 437160, H01L 21385, H01L 2140, H01L 21425

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047585250

ABSTRACT:
In a method of manufacturing a solar cell including a p-n junction formed in a semiconductor substrate, impurity ions are implanted through a mask in the form of an oxide film covering a light receiving surface of the semiconductor substrate except an electrode forming part, thereby forming a p-n junction which is deep in an area beneath the electrode forming part but shallow in the remaining area. Formation of the shallow p-n junction improves the spectral sensitivity in a short wavelength range. Further, utilization of the oxide film as a passivation film can prevent shortening of the life time of minority carriers in the substrate due to heat treatment, thereby retarding the electron-hole recombination rate at the light receiving surface of the substrate.

REFERENCES:
patent: 3436282 (1969-04-01), Shoda
patent: 3945856 (1976-03-01), Koenig et al.
patent: 4029518 (1977-06-01), Matsutani
patent: 4131488 (1978-12-01), Lesk et al.
patent: 4152824 (1979-05-01), Gonsiorawski
patent: 4426234 (1984-01-01), Ohshima et al.
patent: 4483738 (1984-11-01), Blossfeld
patent: 4505023 (1985-03-01), Tscng et al.
patent: 4616247 (1986-10-01), Chang et al.
Nakatani et al., IEEE, "A New Process for High Efficiency Silicon Solar Cells", 1984, pp. 1352-1356.
Muller, "Forming Buried Subcollectors by Ion Implantation", IBM TDB, vol. 19, No. 3, Aug. 76.
Nelson,"Ion Implantation," Science Journal, 3 No. 2 Feb. 1967.
Yang, "Fundamentals of Semiconductor Devices" McGraw Hill, 1978, pp. 73-77.
Gandhi, "ULSI Fabrication Principles," John-Wiley & Sons, pp. 300-301, 321-330.

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