Method of making light-receiving diode

Details Method of making light-receiving diode Method of making light-receiving diode

1986-07-14

1988-07-19

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 20, 437134, 437143, 437152, 437160, H01L 21385, H01L 2140, H01L 21425

Patent

active

047585250

ABSTRACT:
In a method of manufacturing a solar cell including a p-n junction formed in a semiconductor substrate, impurity ions are implanted through a mask in the form of an oxide film covering a light receiving surface of the semiconductor substrate except an electrode forming part, thereby forming a p-n junction which is deep in an area beneath the electrode forming part but shallow in the remaining area. Formation of the shallow p-n junction improves the spectral sensitivity in a short wavelength range. Further, utilization of the oxide film as a passivation film can prevent shortening of the life time of minority carriers in the substrate due to heat treatment, thereby retarding the electron-hole recombination rate at the light receiving surface of the substrate.

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