Method of making light emitting diode bars and arrays

Details Method of making light emitting diode bars and arrays Method of making light emitting diode bars and arrays

1993-12-09

1995-09-26

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 23, 437 90, 437127, 437130, 437133, 437908, 148100, H01L 21465

Patent

active

054534054

ABSTRACT:
Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.

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