Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2004-10-04
2008-10-14
Ha, Nathan W (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
active
07435604
ABSTRACT:
A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.
REFERENCES:
patent: 4532631 (1985-07-01), Shima et al.
patent: 6583442 (2003-06-01), Ito
patent: 6674098 (2004-01-01), Niki et al.
patent: 6809340 (2004-10-01), Kato et al.
patent: 2004/0087050 (2004-05-01), Uemura et al.
patent: 2005/0001223 (2005-01-01), Linder et al.
patent: 2005/0035354 (2005-02-01), Lin et al.
patent: 04061184 (1992-02-01), None
Huang Pao-I
Tu Chuan-Cheng
Wu Jen-Chau
Epistar Corporation
Ha Nathan W
Kinney & Lange , P.A.
LandOfFree
Method of making light emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making light emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making light emitting diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3997027