Method of making light emitting device with...

Details Method of making light emitting device with... Method of making light emitting device with...

2006-05-17

2008-09-23

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S061000, C438S124000, C257S079000, C257S082000

Reexamination Certificate

active

07427523

ABSTRACT:
A method of making a light emitting device is disclosed. The method includes providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition comprising a silicon-containing resin, a metal-containing catalyst, and surface treated particles, the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation, the surface treated particles comprising nonabsorbing metal oxide particles, semiconductor particles, or combinations thereof, and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.

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