Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2008-01-01
2008-01-01
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S106000, C257SE21368, C257SE21499, C257SE21352, C257SE21366
Reexamination Certificate
active
07314770
ABSTRACT:
A method of making a light emitting device is disclosed. The method includes the steps of providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition consisting of a silicon-containing resin and a metal-containing catalyst, wherein the silicon-containing resin consists of silicon-bonded hydrogen and aliphatic unsaturation, and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.
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Boardman Larry D.
Leatherdale Catherine A.
Ouderkirk Andrew J.
Thompson D. Scott
3M Innovative Properties Company
Gallo Elizabeth A.
Nhu David
LandOfFree
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